unisonic technologies co., ltd utt150n03 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-516.a n-channel enhancement mode power mosfet ? description the utc utt150n03 is a n-channel power mosfet, using utc?s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. the utc utt150n03 is generally applied in dc to dc convertor, synchronous or conventional switching pwm controllers. ? features * 150a, 30v, r ds(on) =4.1m ? @ v gs =10v, i d = 75a r ds(on) =4.6m ? @ v gs =4.5v, i d = 75a * high switching speed * high power and current handling capability * rohs compliant ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utt150n03l-ta3-t UTT150N03G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt150n03 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-516.a ver.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 150 a drain current pulsed i dm 266 a single pulsed avalanche energy (note 2) e as 300 mj power dissipation 160 w power dissipation derate above 25c p d 1.07 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.94 c/w ] [u1]: ? ???pulse width=300us
utt150n03 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-516.a ver.a ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =24v, v gs =0v 1 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =75a 3.4 4.1 static drain-source on-state resistance r ds(on) v gs =4.5v, i d =75a 4.0 4.6 m ? dynamic parameters input capacitance c iss 5200 pf output capacitance c oss 970 pf reverse transfer capacitance c rss v gs =0v, v ds =15v, f=1.0mhz 570 pf switching parameters gate resistance r g v gs =0.5v, f=1mhz 2.1 ? q g(tot) v gs =0~10v, v dd =15v, i d =75a, i g =1ma 106 132 nc total gate charge q g(5) v gs =0~5v, v dd =15v, i d =75a, i g =1ma 56 69 nc threshold gate charge q g(th) v gs =0~1v, v dd =15v, i d =75a, i g =1ma 5.0 6.5 nc gate to source charge q gs 15 nc gate charge threshold to plateau q gs2 10 nc gate to drain charge q gd v dd =15v, i d =75a, i g =1ma 23 nc turn-on time t on 168 ns turn-on delay time t d(on) 11 ns rise time t r 105 ns turn-off delay time t d(off) 70 ns fall-time t f 46 ns turn-off time t off v dd =15v, i d =75a, v gs =4.5v, r gs =3.3 ? 173 ns source- drain diode ratings and characteristics i s =150a 1.25 v drain-source diode forward voltage v sd i s =15a 1.0 v body diode reverse recovery time t rr 37 ns body diode reverse recovery charge q rr i sd =150a, di sd /dt=100a/s 21 nc notes: 1. package curr ent limitation is 80a. 2. starting t j = 25c, l = 0.15mh, i as = 64a, v dd = 27v, v gs =10v 3. pulse test: pulse width 300s, duty cycle 2%
utt150n03 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-516.a ver.a ? test circuits and waveforms v ds r l + - v dd dut v gs r gs v gs switching time test circuit pulse width 50% 10% 0 v gs 0 10% 90% v ds t d(on) t on t r t d(off) t off t f 10% 90% 90% 50% switching time waveforms
utt150n03 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-516.a ver.a
utt150n03 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-516.a ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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